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I. Equipment Overview:

Mainly used for 3-6 inch GaAs III-V compound semiconductor crystal growth, capable of achieving VGF/VB process combined crystal growth and other processes, with an automatic control system.

II. Equipment Parameter Types:

III. Main Features and Advantages

1★ Powerful operation functions, Windows interface, display screen operation, allowing users to conveniently modify process control parameters and display various process statuses in real-time; equipped with fault self-diagnosis software, significantly reducing maintenance time;

2★ Reliable industrial computer + PLC mode for fully automatic furnace temperature control;

3★ The program can achieve manual/automatic operation, and after power failure or intermediate shutdown, it can restart based on the process manual temperature rise, saving process time;

4★ Equipped with multiple alarm functions and safety protection features;
5★ Automatic adjustment of constant temperature zone, cascade control, accurately controlling the actual process temperature of the reaction tube;